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Sensors based on mixed metal-oxide semiconductors are characterized by fast response and low energy consumption. In these sensors, zinc oxide is commonly used as binary compound. Gas-sensitive structures based on ZnO can be improved by creation of adjacent adsorption sites for sensitizer gas and target gas. In this work, gas-sensing layers based on zinc oxide nanowires were synthesized by hydrothermal method and then modified in solutions containing precursors - potassium stannate and iron sulfate - to form composite samples of ZnO-Sn and ZnO-Fe, respectively. X-ray photoelectron spectroscopy was used to analyze the effect of modification of sensor layers composed of ZnO nanowires during subsequent processing in solutions of other metal compounds (tin and iron) on the chemical composition of their surface. Sensor properties of the samples were analyzed when detecting isopropyl alcohol vapors. It was found that, depending on the technological conditions, the oxygen content in the form of adsorbed particles changes. Oxygen vacancies participate in the adsorption of such particles. It was demonstrated that the gas-sensitive properties depend on the content of oxygen vacancies. It has been established that the modification of sensor layers takes place with formation of composite surface structures ZnO-Sn and ZnO-Fe and leads to the redistribution of adsorption sites and their energetics. The modification of active surface sites for oxygen and reducing gases adsorption occurs with oxygen vacancies concentration change and leads to increase in the sensor response to isopropyl alcohol vapors.

Key words: X-ray photoelectron spectroscopy, gas sensor, zinc oxide, hydrothermal synthesis, nanostructures, surface states, defects
Published in: ELECTRONICS MATERIALS
Bibliography link: Shomakhov Z. V., Nalimova S. S., Guketlov A. M., Kondratev V. M., Moshnikov V. A. Control of the properties of adsorption sites in the formation of gas-sensitive structures of mixed oxides. Proc. Univ. Electronics, 2024, vol. 29, no. 1, pp. 7–18. https://doi.org/10.24151/1561-5405-2024-29-1-7-18

Zamir V. Shomakhov
Kabardino-Balkarian State University named after H. M. Berbekov (Russia, 360004, Kabardino-Balkarian Republic, Nalchik, Chernyshevsky st., 173)

Svetlana S. Nalimova
Saint Petersburg Electrotechnical University (Russia, 197376, St. Petersburg, Professor Popov st., 5)

Aslan M. Guketlov
Kabardino-Balkarian State University named after H. M. Berbekov (Russia, 360004, Kabardino-Balkarian Republic, Nalchik, Chernyshevsky st., 173)

Valeriy M. Kondratev
Moscow Institute of Physics and Technology (Russia, 141701, Dolgoprudny, Institutsky lane, 9); Alferov Saint Petersburg National Research Academic University of the Russian Academy of Sciences (194021, St. Petersburg, Khlopina str., 8, building 3, letter

Vyacheslav A. Moshnikov
Saint Petersburg Electrotechnical University (Russia, 197376, St. Petersburg, Professor Popov st., 5)

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UDK: 621.382
Publication type: Scientific article
DOI: 10.24151/1561-5405-2024-29-1-7-18
RISC id: VXLGAQ

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